1 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? ultra broad bandwidth: 50 mhz to 50 ghz ? functional bandwidth : 50 mhz to 70 ghz ? 0.8 db insertion loss, ? 31 db isolation at 50 ghz ? low current consumption. ? -10ma for low loss state ? +10ma for isolation state ? m/a-com?s unique algaas hetero-junction anode technology. ? silicon nitride passivation ? polymer scratch protection ? rohs compliant* and 260c reflow compatible description m/a-com?s MA4AGSW3 is an aluminum-gallium- arsenide, single pole, triple throw (sp3t), pin diode switch. the switch features enhanced algaas anodes which are formed using m/a-com?s patented hetero- junction technology. algaas technology produces a switch with less loss than a device fabricated using conventional gaas processes. as much as a 0.3 db reduction in insertion loss can be realized at 50 ghz. this device is fabricated on an omcvd epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. the diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. they are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. the protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. off chip bias circuitry is required. applications the high electron mobility of algaas and the low capacitance of the pin diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs where the series capacitance in each off-arm will load the input. algaas pin diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi- assembly components. yellow areas indicate bond pads absolute maximum ratings @ t amb = +25c (unless otherwise noted) parameter maximum rating operating temperature -55c to +125c storage temperature -55c to +150c incident c.w. rf power +23dbm c.w. breakdown voltage 25v bias current 25ma junction temperature +175c maximum combined operating conditions for rf power, d.c. bias, and temperature: +23 dbm c.w. @ 10 ma (per diode) @ +85c. * restrictions on hazardous substanc es, european union directive 2002/95/ec.
2 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications @ t a = 25c, +/-10ma bias current (on-wafer measurements) *note: typical switching speed is me asured from 10% to 90% of the detected rf voltage driven by a ttl compatible driver. driver output parallel rc network uses a capacitor between 390 pf - 560 pf and a resistor between 150 - 220 ohms to achieve 20 ns rise and fall times. rf specifications parameter frequency band min typ max units insertion loss 0.05 - 18ghz --- 0.6 0.7 db 18 - 50ghz --- 0.8 1.1 db isolation 0.05 - 18ghz 38 45 --- db 18 - 50ghz 24 31 --- db input return loss 0.05 - 18ghz --- 21 --- db 18 - 50ghz --- 24 --- db output return loss 0.05 - 18ghz --- 26 --- db 18 - 50ghz --- 20 --- db switching speed * ( 10 % - 90 % rf voltage ) 10ghz --- 20 --- ns
3 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical r.f. performance (probed on wafer) @ +25c insertion loss @ -10 ma -1 -0.8 -0.6 -0.4 -0.2 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) il ( db ) j2 j3 j4 isolation @ +10 ma -80 -70 -60 -50 -40 -30 -20 -10 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) irl ( db ) j2 j3 j4
4 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance (probed on wafer) @ +25c input return loss @ -10 ma -40 -35 -30 -25 -20 -15 -10 -5 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) irl ( db ) j2 j3 j4
5 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. operation of the MA4AGSW3 switch the simultaneous application of a negative dc current to the low loss port and positive dc current to the remaining isolated switching ports is required for the ope ration of the MA4AGSW3, algaas, pin switch. the backside area of the die is the rf and dc return ground plane. the dc return is connected to the common port j1. the forward bias voltage at j2, j3 & j4 will not exceed 1 .6 volts and is typically 1.4 volts with supply current of 30ma). in the low loss state, the series diode must be forward biased and the shunt diode reverse biased. while for the isolated port, the shunt diode is forw ard biased and the series diode is reverse biased. the bias network design shown below should yield > 30 db rf to dc isolation. the lowest insert ion loss, p1db, ip 3 , and switching speed is achieved by usi ng a voltage pull-up resistor in the dc return path, (j1). a minimum value of | -2v | is recomme nded at this return node, which is achievable with a standard, 5v ttl controlled pin diode driver. MA4AGSW3 schematic with a ty pical external 2-18 ghz bias network typical driver connections control level (dc current) condition of rf output j2 j3 j4 j2-j1 j3-j1 j4-j1 -10ma +10ma +10ma low loss isolation isolation +10ma -10ma +10ma isolation low loss isolation +10ma +10ma -10ma isolation isolation low loss
6 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. chip dimensions and bonding pad locations (in yellow) dim mils mm min typ max min typ max a 52 53 54 1.321 1.346 1.372 b 53 54 55 1.346 1.372 1.397 c 45.0 45.5 46.0 1.143 1.156 1.168 d 21.5 22.0 22.5 0.546 0.559 0.572 e 23.0 23.5 24.0 0.584 0.597 0.610 f 21.5 22.0 22.5 0.546 0.559 0.572 g 3.5 4.0 4.5 0.089 0.102 0.114 h 3.5 4.0 4.5 0.089 0.102 0.114
7 sp3t algaas pin diode switch rev. v5 MA4AGSW3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. assembly instructions cleanliness these chips should be handled in a clean environment. static sensitivity these devices are considered esd class 1a, hbm. pr oper esd techniques should be used when handling these devices. general handling the protective polymer coating on the active areas of the die provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode?s anode. die should primarily be handled with vacuum pickup tools, or alter natively with plastic tweezers. assembly techniques the MA4AGSW3, algaas device is designed to be mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does not have a rich tin content. solder die attach only solders which do not scavenge gold, such as 80/20, au/sn or indalloy #2 is recommended. do not expose die to temperatures greater than 300c for more than 10 seconds. electrical conducti ve epoxy die attach use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal resistance. cure epoxy per manufacturer ?s schedule. typically 150c for 1 hour. ribbon/wire bonding thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. a 1/4 x 3 mil gold ribbon is recommended on all rf ports and should be kept as short as possible for the lowest inductance and best microwave performance. for more detailed handling and assembly instructions, see application note m541 , ?bonding and handling procedures for chip diode devices? at www.macom.com . ordering information part number package MA4AGSW3 waffle pack
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